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 NTE858M NTE858SM Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier
Description: The NTE858M and NTE858SM are dual, low-noise JFET input operational amplifiers combining two state-of-the-art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias currents, input offset currents, and supply currents. Moreover, these devices exhibit low-noise and low harmonic distortion making them ideal for use in high-fidelity audio amplifier applications. Features: D Available in Two Different Package Types: 8-Lead Mini DIP (NTE858M) SOIC-8 Surface Mount (NTE858SM) D Low Input Noise Voltage: 18nVHz Typ D Low Harmonic Distortion: 0.01% Typ D Low Input Bias and Offset Currents D High Input Impedance: 1012 Typ D High Slew Rate: 13V/s Typ D Wide Gain Bandwidth: 4MHz Typ D Low Supply Current: 1.4mA per Amp Absolute Maximum Ratings: Supply Voltage VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18V VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -18V Differential Input Voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Input Voltage Range (Note 1), VIDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Output Short-Circuit Duration (Note 2), tS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW Derate Above TA = +47C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/C Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Note 1. The magnitude of the input voltage must not exceed the magnitude of the supply voltage or 15V, whichever is less. Note 2. The output may be shorted to GND or either supply. Temperature and/or supply voltages must be limited to ensure that power dissipation ratungs are not exceeded.
Electrical Characteristics: (VCC = +15V, VEE = -15V, TA = +25C unless otherwise specified)
Parameter Input Offset Voltage Average Temperature Coefficient of Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Common Mode Input Voltage Range Large-Signal Voltage Gain Output Voltage Swing (Peak-to-Peak) Symbol VIO Test Conditions RS 10k, VCM = 0 TA = 0 to +70C Min - - - Typ 3 - 10 Max 10 13 - Unit mV mV V/C
VIO/T TA = 0 to +70C
IIO IIB ri VICR AVOL VO
VCM = 0, Note 3 VCM = 0, Note 3
- TA = 0 to +70C TA = 0 to +70C - - - -
5 - 30 - 1012
50 2 200 7 - - - - - - - - - 2.5 - - - - - - - -
pA nA pA nA V V/mV V/mV V V V dB dB mA MHz V/s s % nV/Hz pA/Hz % dB
10 +15, -12 VO = 10V, RL 2k RL = 10k RL 10k RL 2k TA = 0 to +70C 25 TA = 0 to +70C 15 24 24 20 70 70 - - VIN = 10V, RL = 2k, CL = 100pF VIN = 20mV, RL = 2k, CL = 100pF - - - - - - - 150 - 28 - - 100 100 1.4 4 13 0.1 10 18 0.01 0.01 120
Common Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current (Each Amplifier) Unity Gain Bandwidth Slew Rate Rise Time Overshoot Factor Equivalent Input Noise Voltage Equivalent Input Noise Current Total Harmonic Distortion Channel Separation
CMRR RS 10k PSRR ID BW SR tr RS 10k
en in THD
RS = 100, f = 1000Hz RS = 100, f = 1000Hz VO(RMS) = 10V, RS 1k, RL 2k, f = 1000Hz AV = 100
Note 3. Input Bias currents of JFET input operational amplifiers approximately double for every 10C rise in Junction Temperature. To maintain Junction Temperature as close to Ambient Temperature as possible, pulse techniques must be used during test.
Pin Connection Diagram Output (1) Inverting Input (1) Non-Inverting Input (1) 1 2 3 8 7 6 5 VCC Output (2) Inverting Input (2) Non-Inverting Input (2)
VEE 4
NTE858M
8 5
.260 (6.6)
1
4
.390 (9.9) Max .155 (3.93)
.300 (7.62)
.100 (2.54) .300 (7.62)
.145 (3.68)
NTE858SM
.192 (4.9)
8
5 .154 (3.91)
.236 (5.99)
1
4
.050 (1.27)
016 (.406) 061 (1.53)
.198 (5.03)
.006 (.152) NOTE: Pin1 on Beveled Edge


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